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IBM working on spinning magnetic memory

News Previously, IBM had been working on a more conventional type of magnetic memory called MRAM. Bill Gallagher, senior manager of exploratory non-volatile memory at IBM, said: "As you make that device smaller [MRAM], you need to increase the magnetic... [20 Aug 2007]

Design Considerations for MRAM

White Paper MRAM (Magnetic Random Access Memory) technology, based on the use of Magnetic Tunnel Junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. [30 Jul 2007]

Two-Level BEOL Processing for Rapid Iteration in MRAM Development

White Paper The implementation of Magnetic Random Access Memory (MRAM) hinges on complex magnetic film stacks and several critical steps in Back-End-Of-Line (BEOL) processing. Although intended for use in conjunction with silicon CMOS front-end device drivers... [23 Mar 2006]

Rapid-Turnaround Characterization Methods for MRAM Development

White Paper Magnetic Random Access Memory (MRAM) technology, based on the use of Magnetic Tunnel Junctions (MTJs), holds the promise of improving on the capabilities of existing charge-based memories by offering the combination of nonvolatility, speed, and... [23 Mar 2006]

Single-Domain Model for Toggle MRAM

White Paper An overview is presented of the use of a single-domain model for developing an understanding of the switching of two coupled magnetic free layers for toggle MRAM (Magnetic Random Access Memory). The model includes the effects of length, width... [23 Mar 2006]

Development of the Magnetic Tunnel Junction MRAM at IBM: From First Junctions to a 16-Mb MRAM Demonstrator Chip

White Paper Following that, the paper discusses the development of the Magnetic Random Access Memory (MRAM) technology, in which the magnetic tunnel junction serves as both the storage device and the storage sensing device. [23 Mar 2006]

Simulations of Magnetic Materials With MDGRAPE-2

White Paper Two research programs are highlighted, the simulation of a curved MRAM cell and the simulation of the write head in a computer disk drive. The use of accelerator hardware for micromagnetics simulations is described, along with some initial results. [23 Mar 2006]

On-Chip MRAM as a High-Bandwidth, Low-Latency Replacement for DRAM Physical Memories

White Paper This paper evaluates a magneto-resistive memory (MRAM)-based hierarchy to address these future constraints. MRAM devices are nonvolatile, and have the potential to be faster than DRAM, denser than embedded DRAM, and can be integrated into the... [29 Mar 2005]

Flash memory’s ‘midlife crisis’ boosts Magnetic RAM

News Magnetic Random Access Memory (MRAM) combines technological principles from both the magnetic world - the basis for the hard-drive industry - and silicon manufacturing. In MRAM, a tiny magnetic field is created inside a memory cell on a chip. [10 Jun 2003]

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