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Opportunities and Challenges of III-V Nanoelectronics for Future High-Speed, Low-Power Logic Applications

Overview This paper highlights the opportunities and challenges of III-V nanoelectronics for future high-speed, low-power digital logic applications. III-V materials in general have significantly higher electron mobility than Si and can potentially play a major role along with Si in future high-speed, lower-power computing. The major potential advantage of using a III-V quantum-well field-effect transistor as a logic transistor is that it can be operated under very low supply voltage(e.g., 0.5 V) and hence, lower power dissipation while still achieving very high speed. Compared to other emerging high-mobility materials, such as, carbon nanotubes and semiconductor nanowires, which require "Bottom-up" chemical synthesis for formation and suffer from the fundamental placement problem, III-V materials are far more practical in terms of patterning.

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Publisher
Intel
File Format
PDF
Date Published
Jul 19, 2007
Format
White Papers
Topics
Semiconductor Tech. - Manufacturing, Application Development, Software Engineering

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